vmmk-3413 25 - 45 ghz directional detector in smt package data sheet description the vmmk-3413 is a small and easy-to-use, broadband, directional detector operating in various frequency bands from 25 to 45 ghz with typical insertion loss of 0.8 db. it is housed in the avago technologies industry-leading and revolutionary sub-miniature chip scale package (gaascap wafer scale leadless package) which is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly equipment. the vmmk-3413 provides a wide detecting power level from -5 to +30 dbm with excellent input and output return losses. a typical of 10 db directivity is provided, and the detector requires only 1.5 v dc biasing with small current drawn of 0.16 ma. wlp0402, 1 mm x 0.5 mm x 0.25 mm attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 70 v esd human body model = 350 v refer to avago application note a004r: electrostatic discharge, damage and control. pin connections (top view) note: u = device code y = month code features ? 1 x 0.5 mm surface mount package ? ultrathin (0.25 mm) ? wide frequency range: 25 to 45 ghz ? wide dynamic range ? low insertion loss ? directivity: 10 db typ. ? in and output match: 50 ohm specifcations (35 ghz, vb = 1.5 v, zin = zout = 50 ? ) ? bias current: 0.16 ma typical ? insertion loss: 0.8 db ? detector output ofset voltage: 63 mv typical ? detector output voltage at +20 dbm: 674 mv typical applications ? point-to-point radio ? monitoring power amplifer output power ? power control loop detector uy uy output/ vdet input/ vbias input/ vbias output/ vdet detector
2 electrical specifcations table 1. absolute maximum rating (1) sym parameters/condition unit absolute max vbias bias voltage (rf input) v 2 ibias bias current ma 1 p in, max cw rf input power (rf input) (2) dbm +31 tch max channel temperature c +150 notes 1. operation of this device above any one of these parameters may cause permanent damage 2. with the dc (typical bias) and rf applied to the device at board temperature, tb = 25 c table 2. dc and rf specifcations t a = 25 c, freq = 35 ghz, v bias = 1.5 v, z in = z out = 50 ? unless otherwise specifed symbol parameters / condition unit min typical max ibias (1) bias current ma 0.1 0.16 0.23 i.l. (1) insertion loss at 25 ghz at 35 ghz at 45 ghz db 0.5 0.8 1.1 irl (1) input return loss db 20 orl (1) output return loss db 17 dir (2) directivity at 25 ghz at 35 ghz at 45 ghz db 10 18 7 vofset (1,3) detector output ofset voltage mv 50 63 80 vdet (4) detector output voltage at +12 dbm mv 550 674 790 notes 1. measured data obtained from wafer-probing, losses from measurement system de-embedded from fnal data, vbias = 1.5 v applied through a broadband bias tee. 2. measured by reversing the detector and applying rf power to the output port. directivity is defned as the diference in db between the power applied in the forward direction and the power required in the reverse direction to produce the same vdet voltage. 3. vofset is measured with rf input power turned of. 4. vdet is measured with +12 dbm rf input power at 35 ghz.
3 product consistency distribution charts at 35 ghz, vbias = 1.5 v ibias: mean = 0.16 ma, lsl = 0.1 ma, usl = 0.23 ma vofset: mean = 63 mv, lsl = 50 mv, usl = 80 mv vdet_on @ pin = +12 dbm: mean = 674 mv, lsl = 550 mv, usl = 790 mv notes: distribution data sample sized is based on at least 57 kpcs taken from mpv lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 70 80 50 60 lsl usl 800 600 700 lsl usl 0.11 0.13 0.15 0.17 0.19 0.09 0.21 0.23 lsl usl
4 vmmk-3413 typical performance s-parameter data obtained using 300 m m g-s-g probe substrate; bias was brought in via broadband bias tees. power vs. vdet data obtained using cpw pcb (fig. 8). losses calibrated out to the package reference plane. (t a = 25 c, vbias = 1.5 v, ibias = 0.16 ma, z in = z out = 50 ? unless otherwise specifed) figure 1. vdet vs. input power figure 2. insertion loss vs. frequency figure 3. input return loss figure 4. output return loss figure 5. pin vs. vdet over temperature at 42 ghz figure 6. pin vs. vdet over vbias at 42 ghz 0.01 0.1 1 10 -20 -10 0 10 20 30 pin (dbm) output dc voltage (v) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 22 25 28 31 34 37 40 43 46 frequency (ghz) s21 (db) -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 22 25 28 31 34 37 40 43 46 frequency (ghz) s11 (db) -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 22 25 28 31 34 37 40 43 46 frequency (ghz) s22 (db) 0.01 0.1 1 10 -10 -5 0 5 10 15 20 25 pin (dbm) output dc voltage (v) 0.01 0.1 1 10 -10 -5 0 5 10 15 20 25 pin (dbm) output dc voltage (v) 25 ghz 35 ghz 45 ghz 25 c 85 c -40 c 1.5 v 1.2 v 1.8 v
5 typical scattering parameters data obtained with 300 m m g-s-g probing on 0.016 inch thick pcb substrate, broadband bias tees, losses calibrated out to the package reference plane. t a = 25 c, z in = z out = 50 ? . freq ghz s11 s21 s12 s22 db mag phase db mag phase db mag phase db mag phase 2 -17.538 0.133 -95.400 -0.164 0.981 -3.500 -0.159 0.982 -3.400 -17.446 0.134 -96.800 5 -22.189 0.078 -116.600 -0.179 0.980 -23.300 -0.178 0.980 -23.200 -22.095 0.079 -119.300 10 -25.036 0.056 -145.600 -0.199 0.977 -50.700 -0.199 0.977 -50.700 -24.777 0.058 -148.200 15 -41.546 0.008 165.551 -0.252 0.971 -77.700 -0.250 0.972 -77.600 -38.966 0.011 123.306 16 -44.980 0.006 47.366 -0.267 0.970 -83.000 -0.266 0.970 -83.000 -38.458 0.012 78.001 17 -35.934 0.016 3.849 -0.285 0.968 -88.500 -0.283 0.968 -88.500 -33.629 0.021 45.982 18 -31.053 0.028 -3.001 -0.305 0.966 -94.000 -0.303 0.966 -94.000 -29.835 0.032 24.096 19 -27.793 0.041 -8.657 -0.326 0.963 -99.500 -0.324 0.963 -99.400 -26.940 0.045 9.650 20 -25.439 0.053 -14.670 -0.349 0.961 -105.100 -0.346 0.961 -105.000 -24.710 0.058 0.401 21 -23.677 0.065 -20.981 -0.373 0.958 -110.500 -0.371 0.958 -110.500 -22.972 0.071 -5.472 22 -22.337 0.076 -27.540 -0.398 0.955 -116.100 -0.396 0.955 -116.100 -21.606 0.083 -9.387 23 -21.317 0.086 -34.302 -0.425 0.952 -121.700 -0.423 0.952 -121.700 -20.531 0.094 -12.389 24 -20.549 0.094 -41.226 -0.452 0.949 -127.200 -0.451 0.949 -127.200 -19.685 0.104 -15.190 25 -19.986 0.100 -48.275 -0.480 0.946 -132.900 -0.479 0.946 -132.800 -19.026 0.112 -18.206 26 -19.592 0.105 -55.421 -0.509 0.943 -138.400 -0.508 0.943 -138.400 -18.518 0.119 -21.605 27 -19.342 0.108 -62.638 -0.538 0.940 -144.100 -0.538 0.940 -144.000 -18.137 0.124 -25.353 28 -19.214 0.109 -69.907 -0.567 0.937 -149.700 -0.568 0.937 -149.700 -17.859 0.128 -29.276 29 -19.189 0.110 -77.214 -0.597 0.934 -155.400 -0.598 0.934 -155.300 -17.667 0.131 -33.116 30 -19.253 0.109 -84.549 -0.626 0.930 -161.000 -0.627 0.930 -161.000 -17.546 0.133 -36.599 31 -19.390 0.107 -91.909 -0.655 0.927 -166.700 -0.657 0.927 -166.800 -17.483 0.134 -39.508 32 -19.588 0.105 -99.295 -0.685 0.924 -172.600 -0.686 0.924 -172.500 -17.467 0.134 -41.755 33 -19.834 0.102 -106.714 -0.714 0.921 -178.200 -0.715 0.921 -178.100 -17.489 0.134 -43.465 34 -20.117 0.099 -114.179 -0.743 0.918 176.000 -0.744 0.918 176.200 -17.542 0.133 -45.063 35 -20.424 0.095 -121.706 -0.772 0.915 170.200 -0.773 0.915 170.300 -17.618 0.132 -47.363 36 -20.746 0.092 -129.318 -0.801 0.912 164.500 -0.802 0.912 164.500 -17.713 0.130 -51.668 37 -21.073 0.088 -137.044 -0.830 0.909 158.400 -0.831 0.909 158.600 -17.821 0.129 -55.697 38 -21.397 0.085 -144.916 -0.861 0.906 152.500 -0.861 0.906 153.000 -17.939 0.127 -59.437 39 -21.711 0.082 -152.972 -0.893 0.902 146.900 -0.892 0.902 147.100 -18.062 0.125 -63.632 40 -22.012 0.079 -161.257 -0.926 0.899 141.100 -0.924 0.899 141.200 -18.185 0.123 -68.310 41 -22.300 0.077 -169.819 -0.962 0.895 135.200 -0.960 0.895 135.100 -18.300 0.122 -73.437 42 -22.579 0.074 -178.712 -1.001 0.891 129.000 -0.999 0.891 129.000 -18.398 0.120 -78.884 43 -22.854 0.072 167.300 -1.044 0.887 123.200 -1.042 0.887 123.300 -18.464 0.119 -84.403 44 -23.136 0.070 157.400 -1.092 0.882 117.000 -1.091 0.882 117.100 -18.478 0.119 -89.590 45 -23.435 0.067 148.300 -1.146 0.876 110.900 -1.147 0.876 111.100 -18.413 0.120 -93.848 46 -23.768 0.065 129.500 -1.208 0.870 104.700 -1.212 0.870 104.800 -18.237 0.122 -96.350
6 vmmk-3413 biasing information biasing and operation the vmmk-3413 is a 3 terminal device consisting of a through 50 ohm line connecting directly between the rf input and rf output ports and a directional coupler with a full wave detector that provides a dc output proportional to rf power input. as with any high frequency device, good grounding is required on the common port under the device for it to produce low loss in the through mode. a suggested pcb layout with appropriate grounding will be cover later in the application section. with only 3 terminals available, the dc bias and detected voltage are internally dc coupled to the input and output terminals respectively. the key to successful operation of the vmmk-3413 is the use of low loss bias decoupling networks connected to both the rf input and the rf output ports. figure 7 shows a simple biasing circuit. the bias decoupling networks provide a low loss ac coupled rf path to the device, a means of biasing the device on the input, and a means of extracting the detected voltage on the output of the device. the detector needs 2 dc blocking caps, c1 and c2, on the input and output ports. this can be accomplished by printing coupled lines on the pcb or using smt capacitors (atc 600 series) with bias detector r1 c1 r2 c2 c4 r3 vdet vb c3 rfin rfout component description c1, c2 0.1 pf (atc 600 series or printed coupled lines) r1 (vb -1.5) / 0.00016 ? r2 10 k ? c3, c4 1 pf r3 external load resistor (optional) figure 7. biasing the vmmk-3413 detector module values chosen for the frequency of operation. all smt components are recommended to be no larger than 0402 size. nominal bias voltage of 1.5 v or 0.16 ma is required for proper operation. biasing on the input is by a way of a large value resistor r1. its value can be computed using the following equation: r1 = (vb -1.5)/0.00016 where vb is the supply voltage. detected dc voltage is extracted on the output by a way of a large value resistor r2, in the range of 10 k ? . bypassing capacitors c3 and c4 are needed to prevent rf infuence on the dc lines. suggested value for bypass capacitors is 1 pf. at zero rf input power, and at 1.5 v supply bias, a nominal 63 mv ofset voltage appears at the detected output port. the internal output source resistance for the detector is approximately 20 k ? . resistor r3 can be used as an external load resistor for the detector. its value can be optimized for the desired vout vs. rf input curve. figure 8 shows a characterization pcb used to obtain the vdet vs. input power characterization data from 25 to 45 ghz. for ease in broadband characterization, two external 45 mhz C 50 ghz bias networks (hp 11612b) were used. figure 8. vmmk-3413 characterization board
7 s parameter measurements the s-parameters are measured on a 0.016 inch thick ro4003 printed circuit test board, using 300 m m g-s-g (ground signal ground) probes. coplanar waveguide is used to provide a smooth transition form the probes to the device under test. the presence of the ground plane on top of the test board results in excellent grounding at the device under test. a combination of solt (short C open C load C thru) and trl (thru C refect -Cline) cali - bration techniques are used to correct for the efects of the test board, resulting in accurate device s parameters package and assembly notes for detailed description of the device package and assembly notes, please refer to application note 5378. ordering information part number devices per container container VMMK-3413-BLKG 100 antistatic bag vmmk-3413-tr1g 5000 7 reel package dimension outline reel orientation device orientation dimensions symbol min (mm) max (mm) e 0.500 0.585 d 1.004 1.085 a 0.225 0.275 not e: all dimensions ar e in mm a e d top view end view ? uy ? uy ? uy ? uy 8 mm 4 mm user feed direction notes: ?u? = device code ?y? = month code esd precautions note: these devices are esd sensitive. the following pre - cautions are strongly recommended. ensure that an esd approved carrier is used when die are transported from one destination to another. personal grounding is to be worn at all times when handling these devices. for more detail, refer to avago application note a004r: electro- static discharge damage and control user feed direction carrier tape reel
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2012 avago technologies. all rights reserved. av02-2917en - december 26, 2012 notice: 1. 10 sprocket hole pitch cumulative tolerance is 0.1 mm. 2. pocket position relative to sprocket hole measured as true position of pocket not pocket hole. 3. ao & bo measured on a place 0.3 mm above the bottom of the pocket to top surface of the carrier. 4. ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier. 5. carrier camber shall be not than 1 m per 100 mm through a length of 250 mm. unit: mm symbol spec. k1 C po 4.00.10 p1 4.00.10 p2 2.00.05 do 1.550.05 d1 0.50.05 e 1.750.10 f 3.500.05 10po 40.00.10 w 8.00.20 t 0.200.02 note: 2 p2 note: 1 po do b b note: 2 e f w a a p1 d1 r0.1 ao 5 (max) scale 5:1 a a section ao = 0.730.05 mm bo = 1.260.05 mm ko = 0.35 +0.05 mm +0 scale 5:1 b b section 5 (max) bo ko t tape dimensions
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